Journal: Thoracic cancer

Article Title: S- and R-Carvedilol Prevent Benzo(a)pyrene-Induced Lung Carcinogenesis.

doi: 10.1111/1759-7714.70109

Figure Lengend Snippet: FIGURE 3 | HPLC analysis of R- and S-Carvedilol: Chiral high-performance liquid chromatography (HPLC) was performed to verify the enantio- meric purity of R- and S-carvedilol obtained from Chem-Impex International Inc. Analysis was conducted using a Phenomenex Lux 5 μm Cellulose-4 LC column (250 × 4.6 mm; Part No. 00G-4491-E0; Serial No. H21-389311; Batch No. 5599–0063). Racemic carvedilol was used as a reference standard (Figure 3A). The results confirmed the high purity and correct identity of both enantiomers (Figure 3B,C).

Article Snippet: These findings indicate that both forms of carvedilol effectively FIGURE 3 | HPLC analysis of R- and S- Carvedilol: Chiral high- performance liquid chromatography (HPLC) was performed to verify the enantiomeric purity of R- and S- carvedilol obtained from Chem- Impex International Inc.

Techniques: High Performance Liquid Chromatography

Journal: Sensors (Basel, Switzerland)

Article Title: Design and Analysis of Soft Error Rate in FET/CNTFET Based Radiation Hardened SRAM Cell

doi: 10.3390/s22010033

Figure Lengend Snippet: Geometric parameters of the 14-nm carbon nanotube field-effect transistor and FinFET.

Article Snippet: Compared to the multigate FinFET and conventional sub-22 nm silicon FET, the gate-all-around technique used in the carbon nanotube field-effect transistors downplays other transistors in terms of power consumption and reliability.

Techniques:

Journal: Sensors (Basel, Switzerland)

Article Title: Design and Analysis of Soft Error Rate in FET/CNTFET Based Radiation Hardened SRAM Cell

doi: 10.3390/s22010033

Figure Lengend Snippet: Simulated virtual source carbon nanotube field effect transistor: ( a ) 3D structure of the VS-CNTFET structure implemented in the SILVACO Atlas TCAD tool, ( b ) cross sectional view of the CNTFET where the 4H-SiC has the property of semiconducting carbon nanotubes, ( c ) cross sectional view of FinFET and ( d ) I–V characteristics extracted from the device.

Article Snippet: Compared to the multigate FinFET and conventional sub-22 nm silicon FET, the gate-all-around technique used in the carbon nanotube field-effect transistors downplays other transistors in terms of power consumption and reliability.

Techniques: